Strained-Si Heterostructure Field Effect Devices

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering.

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After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of biaxial strained-Si films, and the developments of the gate dielectric formation on strained-Si/SiGe heterolayers.

Weight 1 kg
Dimensions 24 × 16 × 5 cm
Book Author

C.K Maiti, L.K Bera, S Chattopadhyay

Edition

1st

Format

Hardback

ISBN

9780199680290

Language

English

Pages

436

Publication Year

Publisher

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