Strained-Si Heterostructure Field Effect Devices

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs.

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Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS.

Weight 1 kg
Dimensions 24 × 16 × 3 cm
Book Author

C.K Maiti, S Chattopadhyay

Edition

1st

Format

Hardback

ISBN

9780750309936

Language

English

Pages

436

Publication Year

Publisher

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